Samsung at the annual Samsung Tech Day in San Jose, California announced that is has started mass production of first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) UFS-based multichip package (uMCP). Samsung introduced 12GB LPDDRX chips with 1y-nanometer process technology back in March that combines six 16-gigabit (Gb) LPDDR4X chips (16Gb=2GB) based on the second-generation 10nm-class (1y-nm) process into a single package.
By combining four of the 24-gigabit (Gb) LPDDR4X chips (24Gb=3GB) based on the second-generation 10nm-class (1y-nm) process into a single package, the new mobile memory is able to break through the current 8GB package limit and provide 10+ GB memory to the broader smartphone market, said the company.
- 12GB LPDDR4X uMCP: four 24Gb (3GB) chips + eUFS 3.0
- 10GB LPDDR4X uMCP: two 24Gb (3GB) chips + two 16Gb (2GB) chips + eUFS 3.0
With 1.5X capacity of the previous 8GB package and a data transfer rate of 4,266 megabits per second (Mbps), the 12GB uMCP can support smooth 4K video recording as well as accommodate AI and machine learning features even for mid-end smartphones.
Samsung said that it plans to rapidly expand the availability of 10+ GB LPDDR DRAM to address the increasing needs of global smartphone makers for higher-capacity memory solutions, while reinforcing its competitive edge in the memory marketplace.
Even though the latest Exynos 990 supports LPDDR5 memory, we can expect the latest 12GB LPPDR4X memory in Galaxy S11 series next year, combined with up to 512GB eUFS 3.0.
Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics, said:
Leveraging our leading-edge 24-gigabit (Gb) LPDDR4X chips, we can offer the highest mobile DRAM capacity of 12GB not only for high-end smartphones but also for mid-range devices. Samsung will continue to support our smartphone-manufacturing customers with on-time development of next-generation mobile memory solutions, bringing enhanced smartphone experiences to many more users around the globe.