Samsung Electronics has announced their newest 3rd generation High Bandwidth Memory 2E (HBM2E) called the Flashbolt. It is a successor to the 2nd generation Aquabolt with double the capacity at 16GB and higher stable transfer speeds at 3.2Gbps.
The new memory design with higher speeds and higher capacity make it ideal for high performance computing (HPC). Flashbolt doubles the memory capacity when compared to Aquabolt from 8GB to 16GB modules. It offers reliable transfer speeds up to 3.2 gigabits per second (Gbps), while offering a memory bandwidth of 410GB/s per stack. Peak transfer speeds have been reported as 4.2Gbps with 538GB/s memory bandwidth per stack.
Samsung will continue to sell its 2nd generation Aquabolt lineup while slowly ramping up volume production for Flashbolt. They are looking to strengthen ecosystem partnerships for its next generation products to transition the industries HBM solutions.
Commenting on the launch, Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics said:
With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market. Samsung will continue to deliver on its commitment to bring truly differentiated solutions as we reinforce our edge in the global memory marketplace