Samsung has introduced the industry’s first 24-gigabit GDDR7 DRAM, which boasts the highest capacity and speed. This breakthrough memory solution is designed to cater to the demands of next-generation applications, such as data centers and AI workstations.
By employing advanced process nodes and PAM3 signaling, the GDDR7 achieves an impressive speed of 40 gigabits-per-second, surpassing its predecessor by 25%.
Additionally, Samsung has incorporated power-saving technologies from mobile products to enhance efficiency and reduce unnecessary power consumption by over 30%. To ensure operational stability at high speeds, the GDDR7 incorporates power gating design techniques to minimize current leakage.
Samsung plans to begin validating this groundbreaking memory solution in next-generation AI computing systems from major GPU customers later this year, with commercialization expected in early 2025.
Commenting on this, YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, said:
After developing the industry’s first 16Gb GDDR7 last year, Samsung has reinforced its technological leadership in the graphics DRAM market with this latest achievement. We will continue to lead the graphics DRAM market by bringing next-generation products that align with the growing needs of the AI market. The 24Gb GDDR7 utilizes 5th-generation 10-nanometer (nm)-class DRAM, which enables cell density to increase by 50% while maintaining the same package size as the predecessor.