Micron has introduced its latest generation 1β (1-beta) DRAM (dynamic random access memory) fabrication. Micron will be able to reduce DRAM costs while enhancing power efficiency and performance thanks to the next node. The company’s final way to make DRAM chips will use deep ultraviolet (DUV) lithography instead of extreme ultraviolet (EUV) technologies. Continue reading “Micron unveils 1-beta node-based LPDDR5X-8500 DRAM”